MCP14700T-E/MF【PDF 5/26 页】IC MOSFET DRIVER HIGH/LOW 8DFN

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MCP14700

1.0

ELECTRICAL

? Notice: Stresses above those listed under "Maximum

CHARACTERISTICS

Absolute Maximum Ratings ?

V CC ........................................................ -0.3V to +7.0V

V BOOT .................................................. -0.3V to +36.0V

V PHASE ............................ V BOOT - 7V to V BOOT + 0.3V

Ratings" may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational sections of this specifica-

tion is not intended. Exposure to maximum rating con-

ditions for extended periods may affect device

reliability.

V PWM .............................................-0.3V to V CC + 0.3V

V HIGHDR ......................V PHASE - 0.3V to V BOOT + 0.3V

V LOWDR .........................................-0.3V to V CC + 0.3V

ESD Protection on all Pins .........................2 kV (HBM)

....................................................................400V (MM)

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, V CC = 5.0V, T J = -40°C to +125°C

Parameters

Sym

Min

Typ

Max

Units

Conditions

V CC Supply Requirements

V CC Operating Range

V CC

4.5

5.0

5.5

V

Bias Supply Voltage

I VCC

—

45

—

μA

PWM HI and PWM LO pin

floating

UVLO (Rising V CC )

UVLO Hysteresis

V UVLO

V HYS

—

—

3.50

500

4.00

—

V

mV

PWM Input Requirements

PWM Input Current

PWM Input Current

PWM LO and PWM HI Rising

I PWM

I PWM

PWM HI_TH

—

—

1.40

7.0

1.0

1.60

10

—

1.80

μA

nA

V

V PWM = 3.0V

V PWM = 0V

V CC = 5.0V

Threshold

PWM LO and PWM HI Falling

PWM LO_TH

1.10

1.20

1.30

V

V CC = 5.0V

Threshold

PWM Input Hysteresis

PWM HYS

—

400

—

mV

V CC = 5.0V

Output Requirements

High Output Voltage (HIGHDR

V OH

V CC - 0.025

—

—

V

V CC = 5.0V

and LOWDR)

Low Output Voltage (HIGHDR

V OL

—

—

0.025

V

V CC = 5.0V

and LOWDR)

High Drive Source Resistance

R HI_SRC

—

1.0

2.5

Ω

500 mA source current,

Note 1

High Drive Sink Resistance

High Drive Source Current

High Drive Sink Current

Low Drive Source Resistance

R HI_SINK

I HI_SRC

I HI_SINK

R LO_SRC

—

—

—

—

1.0

2.0

2.0

1.0

2.5

—

—

2.5

Ω

A

A

Ω

500 mA sink current, Note 1

Note 1

Note 1

500 mA source current,

Note 1

Low Drive Sink Resistance

Low Drive Source Current

Low Drive Sink Current

R LO_SINK

I LO_SRC

I LO_SINK

—

—

—

0.5

2.0

3.5

1.0

—

—

Ω

A

A

500 mA sink current, Note 1

Note 1

Note 1

Note 1:

2:

Parameter ensured by characterization, not production tested.

See Figure 4-1 and Figure 4-2 for parameter definition.

? 2009 Microchip Technology Inc.

DS22201A-page 5

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